Realization of Low On-Resistance 4H-SiC Power MOSFETs by Using Retrograde Profile in P-Body
| Autor: | Keiko Fujihira, Naruhisa Miura, Tomokatsu Watanabe, Yukiyasu Nakao, Naoki Yutani, Ken Ichi Ohtsuka, Masayuki Imaizumi, Tetsuya Takami, Tatsuo Oomori |
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| Rok vydání: | 2007 |
| DOI: | 10.4028/0-87849-442-1.827 |
| Databáze: | OpenAIRE |
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