Effects of P3HT concentration on the electrical properties of the Au/PEDOT:PSS/P3HT/n-GaN hybrid junction structure
Autor: | Kyung-Won Lim, Ji-Yeon Noh, Ha Young Lee, Hunsoo Jeon, Dong Han Ha, Young Moon Yu, Hyung Soo Ahn, Min Jeong Shin, Sam Nyung Yi |
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Rok vydání: | 2017 |
Předmět: |
010302 applied physics
Spin coating Materials science business.industry General Physics and Astronomy Thermionic emission 02 engineering and technology Chemical vapor deposition 021001 nanoscience & nanotechnology 01 natural sciences Surface coating PEDOT:PSS 0103 physical sciences Optoelectronics Metalorganic vapour phase epitaxy 0210 nano-technology business Layer (electronics) Diode |
Zdroj: | Journal of the Korean Physical Society. 71:349-354 |
ISSN: | 1976-8524 0374-4884 |
DOI: | 10.3938/jkps.71.349 |
Popis: | An inorganic-organic hybrid junction has been fabricated by spin coating the p-type poly(3- hexylthiophene-2,5-diyl)(P3HT) and poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT: PSS) on an n-type GaN layer. The GaN layer was formed on Al2O3 by metal organic chemical vapor deposition(MOCVD) method. To investigate the effects of P3HT concentration on the electrical properties, we changed P3HT solution concentration and speed of spin coater. The currentvoltage (I-V ) characteristic of Au/PEDOT:PSS/P3HT/n-GaN shows rectifying behavior. The I-V characteristic was examined in the frame work of the thermionic emission model. The most proper rectifying behavior was obtained for 0.6 wt% and thickness below 65 nm of P3HT used diode. We expect that such hybrid structures, suitably developed, might be enable the fabrication of highquality electronic and optoelectronic devices. |
Databáze: | OpenAIRE |
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