Influence of Deposition Temperature of ZnTe Films on Silicon by Thermal Evaporation

Autor: Ching Fang Tseng, Yi Ting Yu, Shin-Pon Ju, Shih Syun Wei, Wen Shiush Chen, Cheng-Hsing Hsu, Jenn Sen Lin, Wen Hua Kao, Jian-Ming Lu, Chun Hung Lai
Rok vydání: 2013
Předmět:
Zdroj: Advanced Materials Research. :569-572
ISSN: 1662-8985
DOI: 10.4028/www.scientific.net/amr.690-693.569
Popis: The microstructure and electrical properties of ZnTe films were investigated by using thermal evaporation with emphasis on the effects of a deposition temperature. Microstructure, crystallinity, carrier concentration, resistivity, and mobility are shown to be dependent on the deposition temperature. The highest carrier concentration of 9.1×1014 cm-3, the lowest resistivity of 9.9 Ω-cm and the largest mobility of 667 cm2V-1S-1 are presented at a deposition temperature of 580oC, respectively. The ZnTe thin films using thermal evaporation can find applications in solar cell or light emitting diodes.
Databáze: OpenAIRE