High Tg Cyclic Olefin Copolymer Gate Dielectrics for N,N′-Ditridecyl Perylene Diimide Based Field-Effect Transistors: Improving Performance and Stability with Thermal Treatment
| Autor: | Sooji Nam, Chan Eon Park, Se Hyun Kim, Jaeyoung Jang, Dae Sung Chung, Won Min Yun |
|---|---|
| Rok vydání: | 2010 |
| Předmět: |
Organic field-effect transistor
Materials science Gate dielectric Dielectric Cyclic olefin copolymer Condensed Matter Physics Electronic Optical and Magnetic Materials Biomaterials Pentacene Organic semiconductor chemistry.chemical_compound chemistry Chemical engineering Thin-film transistor Electrochemistry Thermal stability |
| Zdroj: | Advanced Functional Materials. 20:2611-2618 |
| ISSN: | 1616-301X |
| Popis: | A novel application of ethylene-norbornene cyclic olefin copolymers (COC) as gate dielectric layers in organic field-effect transistors (OFETs) that require thermal annealing as a strategy for improving the OFET performance and stability is reported. The thermally-treated N,N'-ditridecyl perylene diimide (PTCDI-C13)-based n-type FETs using a COC/SiO 2 gate dielectric show remarkably enhanced atmospheric performance and stability. The COC gate dielectric layer displays a hydrophobic surface (water contact angle = 95° ± 1°) and high thermal stability (glass transition temperature =181 °C) without producing crosslinking. After thermal annealing, the crystallinity improves and the grain size of PTCDI-C13 domains grown on the COC/SiO 2 gate dielectric increases significantly. The resulting n-type FETs exhibit high atmospheric field-effect mobilities, up to 0.90 cm 2 V -1 s -1 in the 20 V saturation regime and long-term stability with respect to H 2 O/O 2 degradation, hysteresis, or sweep-stress over 110 days. By integrating the n-type FETs with p-type pentacene-based FETs in a single device, high performance organic complementary inverters that exhibit high gain (exceeding 45 in ambient air) are realized. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Plný text