Autor: |
Haruo Kishimoto, Harumi Yokokawa, Katsuhiko Yamaji, Yueping Xiong, Teruhisa Horita, Masashi Yoshinaga, Manuel E. Brito |
Rok vydání: |
2011 |
Předmět: |
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Zdroj: |
Solid State Ionics. 192:476-479 |
ISSN: |
0167-2738 |
DOI: |
10.1016/j.ssi.2010.07.017 |
Popis: |
The electronic conductivity of pure ceria with two different impurity levels is examined by dc polarization technique based on the Hebb–Wagner ion blocking method. The impurity level for the ceria with 99.999% purity (5N-CeO 2 ) is about 1/100 of that with 99.9% purity (3N-CeO 2 ) as confirmed by the fluorescence intensity of impurities obtained by Raman spectroscopy. The electronic conductivity for the 5N-CeO 2 was measured at T = 973 K to 1173 K, and the results are essentially the same as those for the 3N-CeO 2 . The electronic conductivity increases with decreasing of P (O 2 ) following slope values of − 1/4 to − 1/6. The − 1/4 dependent region becomes narrower for the 5N-CeO 2 than that for the 3N-CeO 2 . For both types of ceria, the P (O 2 ) independent region appears in the same region of higher than 10 − 2 and 10 − 3 MPa at T = 1073 K and 973 K, respectively. Activation energies for the 5N-CeO 2 were 2.2 eV, 2.6 eV and 1.9 eV in P (O 2 ) dependent regions of − 1/6, − 1/4 and 0, respectively. |
Databáze: |
OpenAIRE |
Externí odkaz: |
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