Electrical properties of Al foil/n-4H-SiC Schottky junctions fabricated by surface-activated bonding
| Autor: | Moeko Matsubara, Marwan Dhamrin, S. Merita, Jianbo Liang, Yoshitaka Nishio, Naoteru Shigekawa |
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| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Materials science Physics and Astronomy (miscellaneous) business.industry Annealing (metallurgy) Schottky barrier General Engineering General Physics and Astronomy Schottky diode 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Surface activated bonding 0103 physical sciences Optoelectronics 0210 nano-technology business FOIL method |
| Zdroj: | Japanese Journal of Applied Physics. 57:02BE01 |
| ISSN: | 1347-4065 0021-4922 |
| Popis: | 17-μm Al-foil/n-4H-SiC Schottky junctions with the foils as contacts are fabricated in order to investigate the impacts of annealing on their electrical characteristics. By measuring their current-voltage and capacitance-voltage characteristics, the ideality factor and Schottky barrier height (SBH) are estimated to be 1.31 and 1.37 eV for junctions after annealing at 673 K, respectively. |
| Databáze: | OpenAIRE |
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