Challenges and Progress in Germanium-on-Insulator Materials and Device Development towards ULSI Integration
| Autor: | Thierry Billon, Laurent Clavelier, Olivier Faynot, M. Piccin, Jéro^me Dechamp, Thomas Signamarcheix, Fabrice Lallement, Arnaud Rigny, Jean-Francois Damlencourt, Chrystel Deguet, Sorin Cristoloveanu, Marie-Anne Jaud, Alexandra Abbadie, Konstantin Bourdelle, Michel Pellat, K. Romanjek, Loic Sanchez, Cécile Maurois, A. Pouydebasque, Fabien Boulanger, Nicolas Daval, Perrine Batude, Cyrille Le Royer, Claude Tabone, Aurélie Tauzin, Eric Guiot, Charlotte Drazek, Frédéric Mazen, Emmanuel Augendre, P. Scheiblin, Bruno Ghyselen, Jean-Michel Hartmann, William Van Den Daele, Maud Vinet, Marc Zussy, Lamine Benaissa, Nicolas Blanc |
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| Rok vydání: | 2009 |
| Předmět: | |
| Zdroj: | ECS Transactions. 25:351-362 |
| ISSN: | 1938-6737 1938-5862 |
| DOI: | 10.1149/1.3203972 |
| Popis: | SOITEC, Parc Technologique des Fontaines, F38190, Bernin, France The recent progress in the fabrication of GeOI substrates and devices is reviewed. Improvements have been made in threading dislocation density, Ge-buried oxide interface passivation, device performance. The potential of various co-integration schemes (lateral and vertical) has been illustrated as alternatives to the fabrication of n-type germanium channel devices. GeOI is also shown to be a versatile platform for the monolithic integration of Si and III-V devices and tunneling field effect transistors. |
| Databáze: | OpenAIRE |
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