Low-temperature transport in Si:Sb ultra-thin doping layers

Autor:	R.G. Biswas, N. L. Mattey, M. J. Kearney, E H C Parker, S M Newstead, Terry E. Whall
Rok vydání:	1993
Předmět:	Weak localization Condensed matter physics Silicon chemistry Antimony Impurity Electrical resistivity and conductivity Doping chemistry.chemical_element General Materials Science Condensed Matter Physics Sheet resistance Magnetic field
Zdroj:	Journal of Physics: Condensed Matter. 5:L201-L206
ISSN:	1361-648X 0953-8984
DOI:	10.1088/0953-8984/5/14/002
Popis:	The authors present the results of low-temperature transport measurements on 'metallic' Si:Sb doping layers with nominal widths of 10 nm, 20 nm and 80 nm. There is clear evidence of weak localization and interaction corrections to the transport coefficients and for a 3D to 2D transition as the layer width decreases-the first observation of these effects in this system. Of particular interest is the fact that the experimental results are in good quantitative agreement with most aspects of the theory, despite the highly disordered and multi-sub-band nature of the samples.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::31854d4ad190bbf1418439a54826330c https://doi.org/10.1088/0953-8984/5/14/002 Zobrazit plný text záznamu