Defects in a bulk GaAs and Q-switching of a Nd:YAG laser with a GaAs output coupler
| Autor: | F. Shayimov, Sh. Payziyev, S. A. Bakhramov, A. Kasimov |
|---|---|
| Rok vydání: | 2010 |
| Předmět: |
congenital
hereditary and neonatal diseases and abnormalities Materials science genetic structures business.industry nutritional and metabolic diseases Saturable absorption Output coupler Laser Q-switching law.invention Gallium arsenide chemistry.chemical_compound Optics Mode-locking chemistry law Optical cavity Nd:YAG laser Optoelectronics sense organs business |
| Zdroj: | SPIE Proceedings. |
| ISSN: | 0277-786X |
| DOI: | 10.1117/12.881110 |
| Popis: | By using a bulk GaAs as an output coupler as well as a saturable absorber, with changing of concentration of defects inside the laser cavity, Q-switching of flash-lamp pumped Nd:YAG laser has been studied. It is shown that the mechanism of formation of the laser pulses, in a wide range of duration which were reported in a lot of previous papers is caused by the intracavity changes of the defect concentration in a GaAs. |
| Databáze: | OpenAIRE |
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