NiO thin films by MOCVD of Ni(dmamb)2 and their resistance switching phenomena
| Autor: | Jin-Ha Hwang, S.S. Lee, K.-C. Min, Yong-Hoon Kim, Taek-Mo Chung, Yong-Keun Lee, Ki-Seok An, C.G. Kim, Nam-Soo Lee, Myoung-Dong Kim, Yil-Hwan You |
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| Rok vydání: | 2007 |
| Předmět: |
Materials science
Scanning electron microscope Nickel oxide Non-blocking I/O Analytical chemistry chemistry.chemical_element Surfaces and Interfaces General Chemistry Substrate (electronics) Condensed Matter Physics Surfaces Coatings and Films Crystallography Nickel X-ray photoelectron spectroscopy chemistry Materials Chemistry Crystallite Thin film |
| Zdroj: | Surface and Coatings Technology. 201:9252-9255 |
| ISSN: | 0257-8972 |
| DOI: | 10.1016/j.surfcoat.2007.04.120 |
| Popis: | We have synthesized the volatile, liquid, nickel precursor Ni(dmamb) 2 , nickel bis(1-dimethylamino-2-methyl-2-butanolate), Ni[OC(CH 3 )(C 2 H 5 )CH 2 N(CH 3 ) 2 ] 2 , and employed it in the MOCVD of nickel oxide (NiO). A stainless steel, cold-wall, low-pressure reactor was employed to grow the NiO films on Si and Pt/SiO 2 /Si substrates. In addition, the resistance switching property of the Pt/NiO/Pt capacitor structure was investigated. The substrate temperature was varied in the range 230–410 °C. The films deposited were characterized by scanning electron microscopy, X-ray photoelectron spectroscopy, X-ray diffraction, and I – V measurements. They were polycrystalline showing dominantly the NiO(111) peak in their X-ray diffraction patterns. The films were found to be almost stoichiometric with the Ni:O ratio of 1.1:0.9 and no appreciable amount of carbon incorporation was detected by XPS. The I – V measurements revealed an interesting switching property of the NiO films showing low and high resistance states thereby suggesting their application as ReRAM devices. |
| Databáze: | OpenAIRE |
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