Field-Effect Transistors with High Electron Mobility on an AlGaN/GaN Heterostructure with Gate Recessing into the Barrier Layer

Autor:	A. Yu. Pavlov, K. N. Tomosh, V. Yu. Pavlov, D. N. Slapovskiy, A. V. Klekovkin, I. A. Ivchenko
Rok vydání:	2022
Předmět:	Biomedical Engineering General Materials Science Bioengineering Electrical and Electronic Engineering Condensed Matter Physics Engineering (miscellaneous)
Zdroj:	Nanobiotechnology Reports. 17:S45-S49
ISSN:	2635-1684 2635-1676
DOI:	10.1134/s2635167622070151
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::315ee61a1162f211d3391c3b8adf6fb8 https://doi.org/10.1134/s2635167622070151 Zobrazit plný text záznamu Full text from SpringerLink