Breakdown voltage and on-resistance of multi-RESURF LDMOS

Autor:	Sang-Koo Chung, E.K. Choi, Y.-I Choi
Rok vydání:	2003
Předmět:	LDMOS Materials science Avalanche diode business.industry General Engineering Electronic engineering Optoelectronics Breakdown voltage business Reduction (mathematics) Device parameters On resistance Degradation (telecommunications)
Zdroj:	Microelectronics Journal. 34:683-686
ISSN:	0026-2692
DOI:	10.1016/s0026-2692(03)00096-x
Popis:	The breakdown voltage and on-resistance of a multi-RESURF LDMOS are studied numerically and analytically. The results are compared with those from the conventional LDMOS. Reduction of on-resistance by 23% is obtained for the multi-layer structure without degradation in the breakdown voltage. An analytical expression for the surface potential distribution of the multi-layer structure is derived which provides a useful mean to determine the breakdown voltage analytically in terms of the device parameters.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::315a4069453824a64dbed8bdf249f44a https://doi.org/10.1016/s0026-2692(03)00096-x Zobrazit plný text záznamu Full Text from ScienceDirect