Influence of Fringe Field on Nano-Electromechanical (NEM) Memory Cells
| Autor: | Boram Han, Woo Young Choi, Ji Yong Song |
|---|---|
| Rok vydání: | 2014 |
| Předmět: |
Condensed Matter::Quantum Gases
Physics Field (physics) business.industry Astrophysics::Instrumentation and Methods for Astrophysics Electrostatics Quantitative Biology::Cell Behavior Computer Science Applications Non-volatile memory Optics Nano Electronic engineering Electrical and Electronic Engineering business Scaling |
| Zdroj: | IEEE Transactions on Nanotechnology. 13:1102-1106 |
| ISSN: | 1941-0085 1536-125X |
| DOI: | 10.1109/tnano.2013.2294892 |
| Popis: | The influence of fringe field on nano-electro-mechanical (NEM) memory cells has been investigated. Because fringe field effects become stronger with cells scaling down, it becomes more difficult to predict the characteristics of small-sized NEM memory cells accurately. In this paper, fringe field effects have been included into a finite-element model. The dependence of fringe field effects on cell parameters has also been evaluated. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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