Low temperature annealed ZnO film UV photodetector with fast photoresponse
| Autor: | Minghui Cao, Zhongwang Sun, Zhi Yang, Jinyou Shao, Zhang Ke, Minqiang Wang |
|---|---|
| Rok vydání: | 2017 |
| Předmět: |
Materials science
Annealing (metallurgy) chemistry.chemical_element Photodetector 02 engineering and technology Zinc 01 natural sciences Responsivity 0103 physical sciences Electrical and Electronic Engineering Instrumentation 010302 applied physics business.industry Metals and Alloys Linearity Response time 021001 nanoscience & nanotechnology Condensed Matter Physics Ray Surfaces Coatings and Films Electronic Optical and Magnetic Materials chemistry Electrode Optoelectronics 0210 nano-technology business |
| Zdroj: | Sensors and Actuators A: Physical. 253:173-180 |
| ISSN: | 0924-4247 |
| DOI: | 10.1016/j.sna.2016.07.026 |
| Popis: | Zinc oxide thin film UV photodetectors based metal-semiconductor-metal structure were fabricated on Au interdigital electrodes by radio frequency magnetron sputtering. The performances of the UV photodetector under different annealing and testing temperatures from RT to 200 °C have been studied, obtaining optimized annealing temperature and suitable working temperature range. The detailed photoresponse mechanism has been discussed by analyzing competitive behaviors of several factors. The photodetector has good photoresponse linearity across a wide range of incident light intensity, and the response time, recovery time and responsivity were 0.82 ms, 0.64 ms and 124 A/W respectively under the 2.5 mW/cm 2 at 5 V applied bias. The low annealing temperature of ZnO film makes it be applied in flexible photodetector with great potential. |
| Databáze: | OpenAIRE |
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