Preparation of aluminum thin films by the facing targets sputtering system
| Autor: | Toyoaki Hirata, Masahiko Naoe, Masao Nagakubo |
|---|---|
| Rok vydání: | 1991 |
| Předmět: |
Materials science
Mechanical Engineering Film plane Metallurgy chemistry.chemical_element Biasing Substrate (electronics) Condensed Matter Physics chemistry Mechanics of Materials Aluminium Sputtering Electrical resistivity and conductivity General Materials Science Crystallite Thin film Composite material |
| Zdroj: | Materials Science and Engineering: A. 134:1260-1263 |
| ISSN: | 0921-5093 |
| DOI: | 10.1016/0921-5093(91)90969-t |
| Popis: | The facing targets sputtering (FTS) system, typical of plasma-free sputtering systems, was used to deposit aluminum thin films composed of very fine grains with a smooth surface, large hardness and low resistivity. When the argon gas pressure P Ar was also low as 10 −1 Pa, the aluminum films deposited at a bias voltage to substrate V b of −40 V became smoother, more reflective and harder. The films deposited at a V b of −100 ∼−160 V revealed a definite (111) orientation of the aluminum crystallites parallel to the film plane. The resistivity ϱ of the films deposited at a P Ar below 10− Pa was almost equal to that of bulk aluminum. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|