GaInAsP/InP Distributed Reflector Lasers Consisting of Deeply Etched Vertical Gratings

Autor:	Jörg Wiedmann, Bo Chen, Jong-In Shim, Shigeo Tamura, Hyo-Chang Kim, Shigehisa Arai, Masataka Ohta, Koji Ebihara
Rok vydání:	2001
Předmět:	Distributed feedback laser Materials science business.industry General Engineering General Physics and Astronomy Biasing Reflector (antenna) Grating Distributed Bragg reflector Laser law.invention Optics Etching (microfabrication) law Optoelectronics business Lasing threshold
Zdroj:	Japanese Journal of Applied Physics. 40:6845
ISSN:	1347-4065 0021-4922
DOI:	10.1143/jjap.40.6845
Popis:	Deep-etching technology, which is a very simple fabrication process and requires only one lithography and one etching step without any regrowth, is applied to realize 1.5–1.55 µm wavelength GaInAsP/InP vertical grating (VG) distributed reflector (DR) lasers, which consist of a distributed feedback (DFB) region with the VG and a high-reflectivity distributed Bragg reflector (DBR) region. First, the coupling coefficient of the VG is theoretically estimated and fundamental lasing characteristics of the VG-DR lasers are investigated. Then, the fabrication process of the VG-DR lasers and the experimentally achieved fundamental lasing characteristics are given. A threshold current of 12.4 mA and a differential quantum efficiency of 42% from the front cleaved facet are achieved for a 220-µm-long and 5-µm-wide device. A submode suppression ratio (SMSR) of 33 dB at a bias current of 2.4 times the threshold is obtained.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::31196e6db06ad06aa5dc7cc0a47715fb https://doi.org/10.1143/jjap.40.6845 Zobrazit plný text záznamu