Structural properties of sputtered amorphous Ga1-xPxfilms

Autor:	E.A. Davis, S J Gurman, N Elgun
Rok vydání:	2000
Předmět:	Absorption spectroscopy Extended X-ray absorption fine structure Sputtering Chemistry Analytical chemistry Infrared spectroscopy General Materials Science Absorption (chemistry) Thin film Condensed Matter Physics Spectroscopy Amorphous solid
Zdroj:	Journal of Physics: Condensed Matter. 12:4723-4733
ISSN:	1361-648X 0953-8984
DOI:	10.1088/0953-8984/12/22/305
Popis:	a-Ga1-xPx (0.5≤x≤1) films have been prepared by r.f. sputtering. The local structure and bonding configurations in these films have been investigated by extended x-ray absorption fine structure (EXAFS) and infrared (IR) spectroscopy measurements. The results show that the network of the films is chemically ordered over the composition range studied. They also show that excess P atoms are incorporated with fourfold coordination into the network for x
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::31191155ce60d15f053c1d2276de6ae2 https://doi.org/10.1088/0953-8984/12/22/305 Zobrazit plný text záznamu