InGaP/InGaAs metal-oxide-semiconductor pseudomorphic high-electron-mobility transistor with a liquid-phase-oxidized InGaP as gate dielectric
| Autor: | Nan-Ying Yang, Yeong-Her Wang, Mau-Phon Houng, Yu Ju Lin, Po-Wen Sze, Kuan-Wei Lee |
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| Rok vydání: | 2005 |
| Předmět: |
Materials science
business.industry Transistor Gate dielectric Electrical engineering Oxide Hardware_PERFORMANCEANDRELIABILITY High-electron-mobility transistor Electronic Optical and Magnetic Materials law.invention Metal chemistry.chemical_compound chemistry Hardware_GENERAL law Gate oxide visual_art Hardware_INTEGRATEDCIRCUITS visual_art.visual_art_medium Optoelectronics Electrical and Electronic Engineering business Hardware_LOGICDESIGN Leakage (electronics) Voltage |
| Zdroj: | IEEE Electron Device Letters. 26:864-866 |
| ISSN: | 0741-3106 |
| DOI: | 10.1109/led.2005.859629 |
| Popis: | An InGaP/InGaAs metal-oxide-semiconductor pseudomorphic high-electron-mobility transistor (MOS-PHEMT) with a thin InGaP oxide layer as the gate dielectric is demonstrated. The MOS-PHEMT not only has the advantages of the MOS structure but also has the high-density, high-mobility 2DEG channel. The MOS-PHEMTs have larger gate swing voltages, lower gate leakage currents, and higher breakdown voltages than their counterpart PHEMTs have. Thus, the proposed MOS-PHEMT may be promising in power device applications. |
| Databáze: | OpenAIRE |
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