Influence de la non stoechiometrie sur les interactions phonons-dislocations dans GaAs:Te
| Autor: | A. Laugier, J. Jouglar, P.L. Vuillermoz |
|---|---|
| Rok vydání: | 1977 |
| Předmět: |
Scattering cross-section
Condensed matter physics Field (physics) Chemistry Condensed Matter Physics Electronic Optical and Magnetic Materials Inorganic Chemistry Atmosphere Condensed Matter::Materials Science Sem micrographs Crystallography Thermal conductivity Impurity Materials Chemistry Ceramics and Composites Physical and Theoretical Chemistry Dislocation |
| Zdroj: | Journal of Solid State Chemistry. 20:227-232 |
| ISSN: | 0022-4596 |
| DOI: | 10.1016/0022-4596(77)90158-x |
| Popis: | In nonstoichiometric materials, the expressions for the phonon-dislocation relaxation time are not sufficient if they only take into account the strain field influence. Low temperature thermal conductivity measurements, associated with SEM micrographs, show that the impurity atmosphere formed around the dislocation after adequate heat treatment may increase the phonon-dislocation scattering cross section. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|