A comparison of state-of-the-art NMOS and SiGe HBT devices for analog/mixed-signal/RF circuit applications

Autor:	P. Vandervoorn, D. Becher, Paul A. Packan, K. Kuhn, Michael L. Hattendorf, R. Basco, Ian R. Post, Ian A. Young
Rok vydání:	2004
Předmět:	Materials science business.industry Heterojunction bipolar transistor Bipolar junction transistor Electrical engineering Mixed-signal integrated circuit BiCMOS Silicon-germanium chemistry.chemical_compound chemistry CMOS MOSFET business NMOS logic
Zdroj:	Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004..
Popis:	RF CMOS performance from a 90nm derivative communications process technology is compared to SiGe BJT performance. NMOS performance at f/sub T//f/sub max/ = 209/248 GHz (70nm) and f/sub T//f/sub max/ = 166/277 GHz (80nm) with F/sub min/ at 0.3 dB (2GHz) and 0.6 dB (10GHz) suggests there is no major reason to implement SiGe HBTs BiCMOS in an integrated communications process.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::3107b0f5a742d7e3c25e7398f0fd5abc https://doi.org/10.1109/vlsit.2004.1345492 Zobrazit plný text záznamu