Extension of the model for Ar+ ion induced etching of Si by SF6

Autor: J. Dieleman, G. N. A. van Veen, F. H. M. Sanders, D.J. Oostra, A.E. De Vries, P. C. Zalm
Rok vydání: 1987
Předmět:
Zdroj: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. :1022-1025
ISSN: 0168-583X
DOI: 10.1016/s0168-583x(87)80203-3
Popis: Recently energy spectra of reaction products emitted during Ar+ ion bombardment induced etching of Si by SF6 condensed on top of it have been reported [8]. The Si(SF6; Ar+) system differs from all others studied to date in that multilayer adsorption of reactive gas occurred during the experiments. This is shown here to induce an additional ejection mechanism. The matrix from which reaction products are finally emitted changes from a “SF6-mixed-into-Si” into a “Si-mixed-into-SF6” type and finally into pure SF6 when the SF6 flux is increased or the substrate temperature is lowered. The profound changes observed in the kinetic energy distributions of specific emitted products upon variation of experimental conditions are reinterpreted and attributed largely to an alteration of the thickness of the condensed SF6 “buffer” layer.
Databáze: OpenAIRE