Mechanism of atomic force microscopy anodization lithography on a mixed Langmuir–Blodgette resist of palmitic acid and hexadecylamine on silicon

Autor:	Yun Kyeong Jang, Haeseong Lee, Haiwon Lee, Sang Jung Ahn
Rok vydání:	2002
Předmět:	Langmuir Materials science Physics and Astronomy (miscellaneous) Silicon Anodizing technology industry and agriculture chemistry.chemical_element Nanotechnology Nanolithography chemistry Resist Microscopy Silicon oxide Lithography
Zdroj:	Applied Physics Letters. 80:2592-2594
ISSN:	1077-3118 0003-6951
Popis:	A degradation process of a resist was observed by an atomic force microscope (AFM) during AFM anodization lithography on a mixed Langmuir–Blodgett resist of palmitic acid and hexadecylamine. Based on the observation, we proposed a two-step mechanism as follows: (i) a partial degradation of the resist was first achieved and (ii) silicon oxide started to be grown in the presence of a resist. Lateral force microscopy was accomplished on the patterned area before and after the resist was stripped in order to confirm when the silicon oxide started to be grown in the area. This result provides us with the actual information on the mechanism of the anodization lithography on an organic resist.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::30f3f68644cf3daa53e351cece6036f8 https://doi.org/10.1063/1.1467984 Zobrazit plný text záznamu