Studies of electron trapping in GaN doped with carbon
| Autor: | Yishai A. Feldman, Konstantin Gartsman, O. Lopatiuk, Leonid Chernyak |
|---|---|
| Rok vydání: | 2007 |
| Předmět: |
business.industry
Scanning electron microscope Doping Metals and Alloys Analytical chemistry Physics::Optics Cathodoluminescence Gallium nitride Surfaces and Interfaces Carrier lifetime Nitride Surfaces Coatings and Films Electronic Optical and Magnetic Materials Condensed Matter::Materials Science chemistry.chemical_compound Semiconductor chemistry Materials Chemistry Electron beam processing business |
| Zdroj: | Thin Solid Films. 515:4365-4368 |
| ISSN: | 0040-6090 |
| Popis: | Irradiation by the beam of the scanning electron microscope is shown to induce a systematic decay of the cathodoluminescence intensity in gallium nitride semiconductor doped with carbon. This decay is accompanied by increased electronic carrier diffusion length, indicating that electron irradiation results in the increase of carrier lifetime. Temperature-dependent cathodoluminescence measurements yielded activation energy for irradiation-induced effect of 210 meV. This observation is consistent with trapping of non-equilibrium electrons on deep, non-ionized carbon levels. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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