A novel Ccb and Rb reduction technique for high-speed SiGe HBTs

Autor:	Marwan H. Khater, Keith Macha, Bob Liedy, Renata Camillo-Castillo, John J. Pekarik, Philip V. Kaszuba, Qizhi Liu, Bjorn Zetterlund, Leon Moszkowicz, Peng Cheng, James W. Adkisson, Kurt A. Tallman, Peter B. Gray, David L. Harame
Rok vydání:	2012
Předmět:	Novel technique Materials science business.industry Semiconductor materials Oxide chemistry.chemical_element Capacitance Reduction (complexity) chemistry.chemical_compound chemistry Electronic engineering Reticle Optoelectronics Boron business
Zdroj:	2012 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM).
DOI:	10.1109/bctm.2012.6352616
Popis:	In this paper, we discuss a novel technique to reduce base resistance (R b ) and collector-base capacitance (C cb ) for higher F max in high-speed SiGe HBTs. In order to reduce C cb , we first located the origins of the different components of C cb through AC extraction. Then we utilized scanning capacitance measurements (SCM) to examine the shape of the collector-base depletion. We then propose a method to reduce the extrinsic C cb , namely by using reticle enhancement techniques to print a blocking oxide layer to inhibit boron outdiffusion. An additional benefit was the reduction of R b by reducing the base link resistance.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::30d6c150efa618b96296cd6b8a710943 https://doi.org/10.1109/bctm.2012.6352616 Zobrazit plný text záznamu