New 1000V SiC MOSFETs enable improved efficiency, density, and cost tradeoff space for PFCs
| Autor: | Adam Barkley, Marcelo Schupbach, Binod Agrawal, Scott Allen |
|---|---|
| Rok vydání: | 2017 |
| Předmět: |
Engineering
Total harmonic distortion business.industry 020208 electrical & electronic engineering 05 social sciences Emphasis (telecommunications) Electrical engineering Topology (electrical circuits) 02 engineering and technology Power factor Converters MOSFET 0202 electrical engineering electronic engineering information engineering Vienna rectifier Electronic engineering 0501 psychology and cognitive sciences business 050107 human factors Power density |
| Zdroj: | 2017 IEEE Applied Power Electronics Conference and Exposition (APEC). |
| DOI: | 10.1109/apec.2017.7930999 |
| Popis: | This paper presents an improved design space for AC/DC converters utilizing 1,000V SiC MOSFETs by taking advantage of their low conduction and switching losses in a simple and cost-effective two-level topology. An efficiency- and cost-optimized 20 kW hardware prototype Power Factor Correction (PFC) is designed, implemented, tested, and compared against similarly rated AC/DC converter topologies with primary emphasis on the Vienna rectifier using SJ MOSFETs. The paper shows that the proposed two-level 20 kW SiC-based AC/DC converter achieves an efficiency/power density/cost point not presently reachable using Si Supper Junction MOSFETs or IGBTs. The prototype has demonstrated a full-load efficiency of 98.2%, an estimated power density of 3.9kW/dm3 and THD I of 2.4% @ V GRID = 480V, V LINK = 800V, and F sw = 48 kHz. |
| Databáze: | OpenAIRE |
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