A Study of Asymmetrical Behaviour in Advanced Nano SRAM Devices

Autor:	Wen-Tung Chang, Vivian Chiang, Tsui-Hua Huang, Chun-Lin Chen, Chun-Ming Chen, Hung-Sung Lin
Rok vydání:	2006
Předmět:	Materials science business.industry Transistor Electrical engineering Hardware_PERFORMANCEANDRELIABILITY Fault detection and isolation law.invention Nanoelectronics law Nano Electronic engineering Node (circuits) Static random-access memory business Nanoprobing Voltage
Zdroj:	13th International Symposium on the Physical and Failure Analysis of Integrated Circuits.
DOI:	10.1109/ipfa.2006.250998
Popis:	The importance of understanding asymmetrical behaviour in SRAM has increased as the technology node shrinks below 100 nm. Single bit failure can possibly be caused by the malfunction of any of the six transistors in a standard SRAM cell. In order to understand the asymmetrical behaviour in advanced nano SRAM devices, nanoprobing is introduced to perform transistor level fault isolation prior to attempting physical failure analysis (PFA)
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::30d1b892a370392324998d7c351c559b https://doi.org/10.1109/ipfa.2006.250998 Zobrazit plný text záznamu