Numerical Modeling of the Anomalous Low-Temperature Dependence of the Tunneling Conductance of a 'Dirty' N-I-N Junction

Autor: Oleg I. Lozin, Natalia V. Kirpichenkova, Anastasia A. Kosach
Rok vydání: 2021
Předmět:
Zdroj: Solid State Phenomena. 316:1004-1010
ISSN: 1662-9779
DOI: 10.4028/www.scientific.net/ssp.316.1004
Popis: A numerical study of the low-temperature tunneling conductance G(T) of the “dirty” (low concentrations of the same non-magnetic impurities in the I layer) N-I-N junction (N is a normal metal; I is an insulator) with random quantum jumpers penetrating the disordered I-layer is performed. In a wide range of low impurity concentrations, the dependence G(T) anomalously, both qualitatively and quantitatively, differs from the corresponding dependence G0(T) in the “pure” (without impurities in the I layer) N-I-N junction. The numerical analysis of the dependence G(T) shows the possibility of the experimental manifestation of these anomalies.
Databáze: OpenAIRE