Autor: |
Oleg I. Lozin, Natalia V. Kirpichenkova, Anastasia A. Kosach |
Rok vydání: |
2021 |
Předmět: |
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Zdroj: |
Solid State Phenomena. 316:1004-1010 |
ISSN: |
1662-9779 |
DOI: |
10.4028/www.scientific.net/ssp.316.1004 |
Popis: |
A numerical study of the low-temperature tunneling conductance G(T) of the “dirty” (low concentrations of the same non-magnetic impurities in the I layer) N-I-N junction (N is a normal metal; I is an insulator) with random quantum jumpers penetrating the disordered I-layer is performed. In a wide range of low impurity concentrations, the dependence G(T) anomalously, both qualitatively and quantitatively, differs from the corresponding dependence G0(T) in the “pure” (without impurities in the I layer) N-I-N junction. The numerical analysis of the dependence G(T) shows the possibility of the experimental manifestation of these anomalies. |
Databáze: |
OpenAIRE |
Externí odkaz: |
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