Analytical Modeling of CZTSe: Ge Solar Cells with Incomplete Gamma Function of Quantum Efficiency
| Autor: | Lee, S., Price, K.J., Saucedo, E., Giraldo, S. |
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| Jazyk: | angličtina |
| Rok vydání: | 2017 |
| Předmět: | |
| DOI: | 10.4229/eupvsec20172017-3dv.2.17 |
| Popis: | 33rd European Photovoltaic Solar Energy Conference and Exhibition; 1119-1122 We quantitatively develop analytical and numerical models of quantum efficiency for CZTSe: nanolayer Ge (550 nm at forward bias of 0.2 V is observed as compared to the expected spectral response at - 0.2 V. Conversely, there is relatively stronger carrier collection between 500 nm and 550 nm at 0.2 V. From the numerical modeling and simulation at 0.2 V, it is found that the alternative explanation is made for the stronger spectral response at the wavelength regions (500 – 550 nm) near the heterojunction interface as compared to dramatic degradation of carrier collection near >550 nm at 0.2 V. This peculiar response is modeled with the linear electric field model with gamma function by inserting thin (< 9 nm) highly defective near-heterojunction interface, which could be eliminated with weak 0.01 Sun (1 mW/cm2) bias light at 400 nm. |
| Databáze: | OpenAIRE |
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