| Popis: |
Our interest in the radiation sensitivity of heavy metal polymers was first sparked by the goal of enhanced miniaturization of integrated circuit (IC) chip features. As the features of IC chins get closer and closer together at the submicron level, microlithographic techniques must use higher energy photons (or electrons, etc.) than are currently used.1 Otherwise, diffraction effects by the photons which pass through adjacent features blur the features and allow short circuits. The thin organic polymer films, which are normally used as lithographic resists, suffer from an inability to absorb all of the higher energy radiation. The unabsorbed radiation backscatters from the oxide layer which is normally between the resist and the semiconductor. |
