Milliwatt-class GaN-based blue vertical-cavity surface-emitting lasers fabricated by epitaxial lateral overgrowth
| Autor: | Noriyuki Fuutagawa, Shouichiro Izumi, Hironobu Narui, Tatsushi Hamaguchi, Masahiro Murayama |
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| Rok vydání: | 2016 |
| Předmět: |
Materials science
Fabrication Gallium nitride 02 engineering and technology Dielectric Stopband Epitaxy 01 natural sciences Vertical-cavity surface-emitting laser law.invention chemistry.chemical_compound Optics law 0103 physical sciences Materials Chemistry Electrical and Electronic Engineering 010302 applied physics business.industry Surfaces and Interfaces 021001 nanoscience & nanotechnology Condensed Matter Physics Laser Surfaces Coatings and Films Electronic Optical and Magnetic Materials chemistry Optoelectronics 0210 nano-technology business Current density |
| Zdroj: | physica status solidi (a). 213:1170-1176 |
| ISSN: | 1862-6300 |
| DOI: | 10.1002/pssa.201532759 |
| Popis: | We have achieved continuous-wave (CW) operation of gallium nitride (GaN)-based vertical-cavity surface-emitting lasers (VCSELs) fabricated by epitaxial lateral overgrowth (ELO) using dielectric distributed Bragg reflectors (DBRs) as masks for selective growth. The GaN VCSELs exhibited CW operation at a wavelength of 453.9 nm, and the maximum output power was 1.1 mW, which is the highest value reported to date. GaN-based materials have presented challenges for obtaining DBRs with high reflectivity and a wide stopband, precise control of the cavity length and a lateral confinement structure to provide laser operation. The proposed VCSEL is immune to these concerns. Its two dielectric DBRs were obtained free from cracks. A high reflectance of more than 99.9% and a stopband with a width of 80–97 nm were obtained for both DBRs. The cavity length was controlled by epitaxial growth to as short as 4.5 µm. An ITO contact electrode on p-type GaN, which is required for a lateral confinement structure, showed electrical reliability under a high current density of 59.6 kA cm−2. The present data demonstrate that the fabrication process adopted here overcomes the shortcomings that have prevented the widespread use of GaN-based VCSELs. |
| Databáze: | OpenAIRE |
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