| Popis: |
In order to research the influence of quantum dot luminescent layer on the properties of quantum dot light emitting diodes (QLEDs), samples of QLEDs with the structure of ITO/PEDOT: PSS/Poly-TPD/CdSe/CdS/ZnS/Alq3/Al were fabricated through spin coating and vacuum evaporation technologies. Experiment results show that with the quantum dot concentration being fixed to 8 mg/ml, the devices have good electroluminescent properties and excitons recombination luminescent region is mainly located in the quantum dot layer. Based on the determination of concentration of quantum dot, samples of QLEDs with the structure of ITO/PEDOT: PSS/Poly-TPD/GA_CdSe/ZnS/ZnO/Al and ITO/PEDOT: PSS/Poly-TPD/CdSe/CdS/ZnS/ZnO/Al were fabricated. Experiment results show that when the quantum dot type is CdSe/CdS/ZnS, the devices emit red spectral radiation with high brightness up to 5225 cd/m2 and have no defect state luminescence in contrast to the device using GA_CdSe/ZnS as the quantum dot luminescent layer. The research results have directive significance on the fabrication of QLEDs. |
