Strain controlled growth of crack-free GaN with low defect density on silicon (1 1 1) substrate
| Autor: | P. Drechsel, H. Riechert |
|---|---|
| Rok vydání: | 2011 |
| Předmět: |
Materials science
Silicon chemistry.chemical_element Mineralogy Gallium nitride Chemical vapor deposition Substrate (electronics) Nitride Condensed Matter Physics Inorganic Chemistry Full width at half maximum chemistry.chemical_compound Strain engineering chemistry Materials Chemistry Sapphire Composite material |
| Zdroj: | Journal of Crystal Growth. 315:211-215 |
| ISSN: | 0022-0248 |
| DOI: | 10.1016/j.jcrysgro.2010.09.024 |
| Popis: | We demonstrate the growth of 4.5 μm thick gallium nitride on 100 mm diameter silicon (1 1 1) substrate using metal-organic chemical vapor deposition. For strain engineering an aluminum nitride buffer and several interlayers were applied. The realized gallium nitride layer-stack is crack-free. Several characterization methods were applied to study the crystalline quality. In X-ray diffraction measurements the full width at half maximum of the (0 0 2) reflection was found to be as low as 400″, whereas the (2 0 1) reflection showed a full width at half maximum of 580″. For verification transmission electron microscopy examinations were performed to determine the structural quality. A comparison to gallium nitride, grown on sapphire, is made. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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