Application of Flash Lamp Annealing on Nitrogen-Doped Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors
| Autor: | Hyoung June Kim, Yoonsuk Kim, Jin-Ha Hwang, Byung-Kuk Kim, Jin-Soo Kim, Eunsoo Choi, Seungho Park, Seok Kim |
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| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Flash-lamp Materials science Amorphous indium gallium zinc oxide Annealing (metallurgy) business.industry Nitrogen doped 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Electronic Optical and Magnetic Materials Thin-film transistor 0103 physical sciences Optoelectronics 0210 nano-technology business |
| Zdroj: | ECS Journal of Solid State Science and Technology. 6:P778-P785 |
| ISSN: | 2162-8777 2162-8769 |
| DOI: | 10.1149/2.0041712jss |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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