Red luminescence in H-doped β−Ga2O3

Autor: E. Chikoidze, Philippe Bove, Curtis P. Irvine, Ferechteh H. Teherani, Matthew R. Phillips, Eric V. Sandana, Yves Dumont, Thanh Tung Huynh, Muhammad Zakria, Cuong Ton-That, David J. Rogers
Rok vydání: 2020
Předmět:
Zdroj: Physical Review Materials. 4
ISSN: 2475-9953
DOI: 10.1103/physrevmaterials.4.085201
Popis: The effects of hydrogen incorporation into $\ensuremath{\beta}\text{\ensuremath{-}}\mathrm{G}{\mathrm{a}}_{2}{\mathrm{O}}_{3}$ thin films have been investigated by chemical, electrical, and optical characterization techniques. Hydrogen incorporation was achieved by remote plasma doping without any structural alterations of the film; however, x-ray photoemission reveals major changes in the oxygen chemical environment. Depth-resolved cathodoluminescence (CL) reveals that the near-surface region of the H-doped $\mathrm{G}{\mathrm{a}}_{2}{\mathrm{O}}_{3}$ film exhibits a distinct red luminescence (RL) band at 1.9 eV. The emergence of the H-related RL band is accompanied by an enhancement in the electrical conductivity of the film by an order of magnitude. Temperature-resolved CL points to the formation of abundant H-related donors with a binding energy of $28\ifmmode\pm\else\textpm\fi{}4\phantom{\rule{0.16em}{0ex}}\mathrm{meV}$. The RL emission is attributed to shallow donor-deep acceptor pair recombination, where the acceptor is a ${V}_{\mathrm{Ga}}$-H complex and the shallow donor is interstitial H. The binding energy of the ${V}_{\mathrm{Ga}}$-H complex, based on our experimental considerations, is consistent with the computational results by Varley et al., [J. Phys.: Condens. Matter 23, 334212 (2011)].
Databáze: OpenAIRE
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