Comprehensive analytical expression for dose dependent ion-implanted impurity concentration profiles

Autor:	Ritsuo Sudo, Yoko Tada, Kunihiro Suzuki, Miki Tomotani, Thomas Feudel, Wolfgang Fichtner
Rok vydání:	1998
Předmět:	Chemistry Gaussian Dose dependence Function (mathematics) Condensed Matter Physics Expression (mathematics) Electronic Optical and Magnetic Materials Ion symbols.namesake Impurity Materials Chemistry Gaussian function symbols Range (statistics) Electrical and Electronic Engineering Atomic physics
Zdroj:	Solid-State Electronics. 42:1671-1678
ISSN:	0038-1101
DOI:	10.1016/s0038-1101(98)00145-2
Popis:	We propose an analytical expression for dose dependent ion-implanted impurity concentration profiles using a main function and a tail function. The main function describes the profile near the peak region and the tail function describes the channeling tail profile. The tail function can express various tail lengths with various shapes. We first use a Pearson IV function as the main function, and show that it covers B, BF2, P, AsIn, and Sb ion-implanted impurity concentration profiles in the energy range of 10 to 180 keV and in the full dose range. We also demonstrate that some of the ion-implanted impurity concentration profiles can be expressed with a simpler main function: a Gaussian and a joined half Gaussian function.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::30a96210eb63d4872af5f33c4af6f4d6 https://doi.org/10.1016/s0038-1101(98)00145-2 Zobrazit plný text záznamu Full Text from ScienceDirect