Vanadium as an impurity trapper for purification of metallurgical-grade silicon
| Autor: | Huaxian Cai, Chentong Zhang, Sa Zhang, Jinshui Meng, Xuetao Luo, Wang Sheng, Liuqing Huang, Yaohao Zhang |
|---|---|
| Rok vydání: | 2021 |
| Předmět: |
Microstructural evolution
Materials science Silicon Acid etching Inorganic chemistry Alloy chemistry.chemical_element Vanadium Filtration and Separation 02 engineering and technology engineering.material 021001 nanoscience & nanotechnology Analytical Chemistry 020401 chemical engineering chemistry Etching (microfabrication) Impurity Phase (matter) engineering 0204 chemical engineering 0210 nano-technology |
| Zdroj: | Separation and Purification Technology. 260:118199 |
| ISSN: | 1383-5866 |
| DOI: | 10.1016/j.seppur.2020.118199 |
| Popis: | In this study, vanadium (V) was employed as an impurity trapper for purification of metallurgical-grade silicon (MG-Si). The effect of V addition on the microstructural evolution, etching behavior, and impurities removal of MG-Si were investigated. It was found that Si2V and Si-Al-Fe-V phases were formed in the Si-5 wt%V alloy. The etching behavior of Si-V alloy was studied through the in-situ etching method and Eh-pH diagrams for Si-V-N/Cl/F-H2O system. The results showed that the V addition increases the difficulty of acid etching of the precipitated phases in MG-Si due to the low acid sensitivity of Si2V phase, and the HCl+HF mixture was effective for the elimination of precipitated phases in Si-V alloy. Compared to the directly acid leaching of MG-Si, the enhanced-effect of V addition on removal efficiencies of impurities Fe, Al, Ca, Ti, Cr, and B was confirmed. Notably, the removal efficiency of B was increased from 22.78% to 53.16%, mainly attributing to the formation of VB2 by V addition. This study is intended to provide an alternative candidate of impurity trapper for the purification of MG-Si. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full Text from ScienceDirect