GaAs monolithic circuit for millimeter-wave receiver application

Autor: W. Macropoulos, G. Lincoln, W. Courtney, A. Chu, R. Sudbury, W. Lindley, L. Mahoney
Rok vydání: 1981
Předmět:
Zdroj: 1981 IEEE International Solid-State Circuits Conference. Digest of Technical Papers.
DOI: 10.1109/isscc.1981.1156197
Popis: A 31GHz monolithic receiver prototype, using integrating mixer diodes and MESFETs on a GaAs substrate, will be described. The single monolithic chip exhibits a conversion gain of 4dB and a receiver noise figure of 11.5dB (SSB).
Databáze: OpenAIRE