Large Area 4H SiC Products for Power Electronic Devices
| Autor: | Jeffrey Quast, Ian Manning, Christopher Parfeniuk, Victor Torres, Kevin Moeggenborg, Bernd Thomas, Gil Yong Chung, Edward Sanchez, Jie Zhang, Daniel Adams, Clinton Whiteley, Darren Hansen |
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| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Materials science business.industry Mechanical Engineering Doping Bulk crystal growth 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics Epitaxy 01 natural sciences Mechanics of Materials 0103 physical sciences Electronic engineering Optoelectronics General Materials Science Basal plane Wafer Electronics 0210 nano-technology business |
| Zdroj: | Materials Science Forum. 858:11-14 |
| ISSN: | 1662-9752 |
| DOI: | 10.4028/www.scientific.net/msf.858.11 |
| Popis: | Efforts to develop 150 mm 4H SiC bare wafer and epitaxial substrates for power electronic device applications have resulted in quality improvements, such that key metrics match or outperform 100 mm substrates. Total dislocation densities and threading screw dislocation densities measured for 150 mm wafers were ~4100 cm-2 and ~100 cm-2, respectively, compared with values of ~5900 cm-2 and ~300 cm-2 measured for 100 mm wafers. While median basal plane dislocation counts in 150 mm samples exceed those of the smaller platform, a nearly 45% reduction was realized, resulting in a median density of ~3900 cm-2. Epilayers grown on 150 mm substrates likewise exhibit quality metrics that are comparable to 100 mm samples, with median thickness and doping sigma/mean values of 1.1% and 4.4%, respectively. |
| Databáze: | OpenAIRE |
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