Intersubband transitions in proton irradiated In0.52Ga0.48As/In0.52Al0.48As multiple quantum wells grown on semi-insulating InP substrate

Autor:	Mohamed Missous, Bradley D. Weaver, M. O. Manasreh, Qiaoying Zhou
Rok vydání:	2002
Předmět:	Materials science Physics and Astronomy (miscellaneous) Proton business.industry Annealing (metallurgy) Crystallographic defect Gallium arsenide chemistry.chemical_compound Semiconductor chemistry Optoelectronics Irradiation business Electronic band structure Quantum well
Zdroj:	Applied Physics Letters. 81:3374-3376
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.1519726
Popis:	Intersubband transitions in In0.52Ga0.48As/In0.52Al0.48As multiple quantum wells (MQWs) were investigated as a function of 1 MeV proton irradiation dose and thermal annealing temperature. It is observed that proton doses as high as 1×1014 cm−2 do not have a measurable effect on the intensity or the peak position energy of the intersubband transitions. While a dose of 1×1014 cm−2 has shown a detrimental effect on the intersubband transitions in the GaAs/AlGaAs MQWs, the intersubband transitions in InGaAs/InAlAs MQWs withstood proton doses as high as 1×1015 cm−2 and completely depleted after irradiation with a dose of 3×1015 cm−2. Furnace thermal annealing of the heavily irradiated samples shows that the depleted intersubband transitions in InGaAs/InAlAs MQW samples were almost completely recovered.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::30876b6e77e2ce3ef92bbe61395e5814 https://doi.org/10.1063/1.1519726 Zobrazit plný text záznamu