Full CMP Integration of TiN Damascene Metal Gate Devices

Autor:	T. Farjot, F. Ducroquet, M.E. Nier, S. Tedesco, Bernard Previtali, Y. Gobil, M. Heitzmann, L. Ulmer, Simon Deleonibus, J.-F. Lugand, F. Coudert, H. Achard
Rok vydání:	2000
Předmět:	Materials science Fabrication business.industry Copper interconnect chemistry.chemical_element Dielectric law.invention Capacitor chemistry law Electronic engineering Optoelectronics Boron Tin business Metal gate Electronic circuit
Zdroj:	30th European Solid-State Device Research Conference.
DOI:	10.1109/essderc.2000.194801
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::3070f749415614370b460bf23ced4f90 https://doi.org/10.1109/essderc.2000.194801 Zobrazit plný text záznamu