An 80ns 1Mb ROM
Autor: | Taira Iwase, F. Masuoka, Norio Endo, Shoji Ariizumi, M. Ono |
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Rok vydání: | 1984 |
Předmět: | |
Zdroj: | 1984 IEEE International Solid-State Circuits Conference. Digest of Technical Papers. |
DOI: | 10.1109/isscc.1984.1156660 |
Popis: | This paper will describe a 1Mb programmable ROM incorporating a through-hole programmed mask ROM cell and a CMOS fully static sense amp. The ROM has been fabricated using a double poly-Si P-well CMOS technology, achieving a cell size of 33μm2. |
Databáze: | OpenAIRE |
Externí odkaz: |