An 80ns 1Mb ROM

Autor: Taira Iwase, F. Masuoka, Norio Endo, Shoji Ariizumi, M. Ono
Rok vydání: 1984
Předmět:
Zdroj: 1984 IEEE International Solid-State Circuits Conference. Digest of Technical Papers.
DOI: 10.1109/isscc.1984.1156660
Popis: This paper will describe a 1Mb programmable ROM incorporating a through-hole programmed mask ROM cell and a CMOS fully static sense amp. The ROM has been fabricated using a double poly-Si P-well CMOS technology, achieving a cell size of 33μm2.
Databáze: OpenAIRE