RAPID THERMAL ANNEALING OF ARSENIC IMPLANTED SILICON FOR THE FORMATION OF ULTRA SHALLOW N+P JUNCTIONS

Autor:	A. Mitsinakis, D. Girginoudi, A. Thanailakis, N. Georgoulas, M. Kotsani
Rok vydání:	2001
Předmět:	Materials science chemistry Silicon business.industry Optoelectronics chemistry.chemical_element Rapid thermal annealing business Arsenic
Zdroj:	Microelectronics, Microsystems and Nanotechnology.
DOI:	10.1142/9789812810861_0026
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::30686e1fd4a744b15524aa4e93e4f0ba https://doi.org/10.1142/9789812810861_0026 Zobrazit plný text záznamu