Reactor modeling for radio frequency plasma deposition of SiNxHy: Comparison between two reactor designs

Autor:	G. Dupont, J P Couderc, Bernard Despax, Hubert Caquineau
Rok vydání:	1996
Předmět:	Materials science Flow (psychology) Kinetic scheme Analytical chemistry Surfaces and Interfaces Mechanics Plasma Condensed Matter Physics Silane Surfaces Coatings and Films Momentum chemistry.chemical_compound Silicon nitride chemistry Deposition (phase transition) Thin film
Zdroj:	Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 14:2071-2082
ISSN:	1520-8559 0734-2101
DOI:	10.1116/1.580083
Popis:	Plasma deposition processes involve complex phenomena which make the design and optimization of industrial equipments difficult. In the particular case of silane‐ammonia plasmas to produce silicon nitride (at very low silane percentage), two flow arrangements, i.e., (i) a longitudinal flow reactor and (ii) an axisymmetric showerhead electrode reactor were studied by two‐dimensional modeling of momentum and mass transport. First, a kinetic scheme which enables us to reproduce experimental results for both reactor configurations was selected enlightening an unusual behavior of Si(NH2)3 radicals. Then, the way silane is consumed and its consequences on active species production was outlined as playing the leading parts in the processes. As silane concentration decreases along the flow direction, the modeling of the longitudinal flow reactor shows a steep decrease of the deposition rate and a significant composition variation of the deposit. In the axisymmetric reactor, the film thickness and composition uniformities considerably improve due to the distributed gas feed.
Databáze:	OpenAIRE
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