Optical Properties of Sputtered SnS Thin Films for Photovoltaic Absorbers
| Autor: | R. Chandrasekharan, Michael A. Motyka, Mark W. Hom, R. E. Banai, Nikolas J. Podraza, Jeffrey R.S. Brownson, Hyeonseok Lee |
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| Rok vydání: | 2013 |
| Předmět: |
Materials science
Organic solar cell Band gap business.industry chemistry.chemical_element Sputter deposition Condensed Matter Physics Solar irradiance Electronic Optical and Magnetic Materials chemistry Attenuation coefficient Cavity magnetron Optoelectronics Electrical and Electronic Engineering Thin film business Tin |
| Zdroj: | IEEE Journal of Photovoltaics. 3:1084-1089 |
| ISSN: | 2156-3403 2156-3381 |
| Popis: | Tin monusulfide (SnS) is an absorber with promising optoelectronic properties and low environmental constraints of interest for high-efficiency solar cells. The optical properties of SnS thin films are investigated to assess their compatibility with the solar spectrum. SnS thin films were RF magnetron sputter-deposited at target powers of 105-155 W and total pressures of 5 to 60 mtorr in argon at room temperature. X-ray diffraction patterns confirmed a dominant tin monosulfide herzenbergite phase. The absorption coefficient was determined by spectroscopic ellipsometry and unpolarized spectrophotometry measurements. Both methods show that the films have absorption coefficients above the band gap in the range of 105 -106 cm-1. The direct gap, indirect gap, and forbidden direct gap for the films were found to be in the range of 1.2-1.6 eV, indicating a strong match with the solar irradiance spectrum. |
| Databáze: | OpenAIRE |
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