Potentiometry of an operating organic semiconductor field-effect transistor

Autor:	Kannan Seshadri, C. Daniel Frisbie
Rok vydání:	2001
Předmět:	Kelvin probe force microscope Physics and Astronomy (miscellaneous) business.industry Chemistry Transistor Analytical chemistry Electrometer law.invention Organic semiconductor law Optoelectronics Field-effect transistor business Electrical impedance Voltage drop Voltage
Zdroj:	Applied Physics Letters. 78:993-995
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.1345805
Popis:	The potential profile across the channel of an operating sexithiophene-based field-effect transistor (FET) was investigated using an atomic force microscope with a conducting probe. A high impedance electrometer recorded the probe potential when it was placed in contact at fixed points with the channel surface. Tapping mode images taken with the same probe before and after individual point contact measurements verified that no damage was done to the device and allowed correlation of the potential profile with the device architecture. For any given source-drain bias, most of the potential drop occurred at the source and drain contacts, meaning the FET was contact limited. Moreover, the potential drop was not fixed but depended on the applied drain and gate voltages. This study demonstrates the utility of potential profiling for identifying high resistance bottlenecks to charge transport in organic-based devices.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::304abbb3ca3e6a295e7d8e52d220048a https://doi.org/10.1063/1.1345805 Zobrazit plný text záznamu