Retention Improvement in Vertical NAND Flash Memory Using 1-bit Soft Erase Scheme and its Effects on Neural Networks

Autor:	Sung-Ho Park, Dongseok Kwon, Ho-Nam Yoo, Jong-Won Back, Joon Hwang, Yeongheon Yang, Jae-Joon Kim, Jong-Ho Lee
Rok vydání:	2022
Zdroj:	2022 International Electron Devices Meeting (IEDM).
DOI:	10.1109/iedm45625.2022.10019529
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::3046460cbbaef0fbda123cb5d6837991 https://doi.org/10.1109/iedm45625.2022.10019529 Zobrazit plný text záznamu