Nano-XRF Analysis of Metal Impurities Distribution at PL Active Grain Boundaries During mc-Silicon Solar Cell Processing
Autor: | Mariana I. Bertoni, Steve Johnston, Simone Bernardini, Michael Stuckelberger, Bradley West, Barry Lai, Tine Uberg Nærland |
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Rok vydání: | 2017 |
Předmět: |
Photoluminescence
Materials science Silicon chemistry.chemical_element X-ray fluorescence 02 engineering and technology 01 natural sciences law.invention law Impurity 0103 physical sciences Solar cell Wafer Electrical and Electronic Engineering 010302 applied physics business.industry Metallurgy 021001 nanoscience & nanotechnology Condensed Matter Physics Electronic Optical and Magnetic Materials Anti-reflective coating chemistry Optoelectronics Grain boundary 0210 nano-technology business |
Zdroj: | IEEE Journal of Photovoltaics. 7:244-249 |
ISSN: | 2156-3403 2156-3381 |
DOI: | 10.1109/jphotov.2016.2621340 |
Popis: | Metal impurities are known to hinder the performance of commercial Si-based solar cells by inducing bulk recombination, increasing leakage current, and causing direct shunting. Recently, a set of photoluminescence (PL) images of neighboring multicrystalline silicon wafers taken from a cell production line at different processing stages has been acquired. Both band-to-band PL and sub-bandgap PL (subPL) images showed various regions with different PL signal intensity. Interestingly, in several of these regions a reversal of the subPL intensity was observed right after the deposition of the antireflective coating. In this paper, we present the results of the synchrotron-based nano-X-ray fluorescence imaging performed in areas characterized by the subPL reversal to evaluate the possible role of metal decoration in this uncommon behavior. Furthermore, the acquisition of a statistically meaningful set of data for samples taken at different stages of the solar cell manufacturing allows us to shine a light on the precipitation and rediffusion mechanisms of metal impurities at these grain boundaries. |
Databáze: | OpenAIRE |
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