Simulation Study of Dominant Statistical Variability Sources in 32-nm High- $\kappa$/Metal Gate CMOS

Autor:	Gareth Roy, A. Juge, O. Saxod, Xingsheng Wang, Asen Asenov, A. Bajolet
Rok vydání:	2012
Předmět:	Materials science CMOS Logic gate MOSFET Semiconductor device modeling Electronic engineering Granularity Electrical and Electronic Engineering Metal gate Standard deviation Electronic Optical and Magnetic Materials Computational physics Threshold voltage
Zdroj:	IEEE Electron Device Letters. 33:643-645
ISSN:	1558-0563 0741-3106
Popis:	Comprehensive 3-D simulations have been carried out and compared with experimental data highlighting the dominant sources of statistical variability in 32-nm high-κ/metal gate MOSFET technology. The statistical variability sources include random discrete dopants, line edge roughness, and metal gate granularity. Their relative importance is highlighted in the numerical simulations. Excellent agreement is achieved between the simulated and measured standard deviation of the threshold voltage.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::303f23a8bd61b21325dd50e197683a7a https://doi.org/10.1109/led.2012.2188268 Zobrazit plný text záznamu