| Autor: |
K.H. Yuan, Shih-Chia Lin, James B. Kuo |
| Rok vydání: |
2002 |
| Předmět: |
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| Zdroj: |
Proceedings 2000 IEEE Hong Kong Electron Devices Meeting (Cat. No.00TH8503). |
| DOI: |
10.1109/hkedm.2000.904213 |
| Popis: |
This paper presents short-channel effects of SOI partially-depleted (PD) dynamic-threshold MOS (DTMOS) devices using a compact model derived from a quasi-2D approach and MEDICI 2D simulation. Based on the analytical model, as verified by the 2D simulation results, the DTMOS device has less short channel effects including drain-induced-barrier-lowering (DIBL)-induced short channel effects. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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