SiGe HBTs in 90nm BiCMOS technology demonstrating 300GHz/420GHz fT/fMAX through reduced Rb and Ccb parasitics

Autor:	John J. Pekarik, Marwan H. Khater, Bjorn Zetterlund, James W. Adkisson, C. Parrish, Vibhor Jain, Renata Camillo-Castillo, David L. Harame, A. Pyzyna, Christa R. Willets, Robert K. Leidy, Peter B. Gray, Sebastian Engelmann, Peng Cheng, Jeff Gambino, Q.Z. Liu
Rok vydání:	2013
Předmět:	Millisecond Materials science business.industry Heterojunction bipolar transistor BiCMOS Capacitance chemistry.chemical_compound chemistry Electrical resistance and conductance Silicide Optoelectronics Figure of merit Parasitic extraction business
Zdroj:	2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM).
DOI:	10.1109/bctm.2013.6798182
Popis:	Scaling both the fT and the fMAX of SiGe HBTs is quite challenging due to the opposing physical device requirements for improving these figures of merit. In this paper, millisecond anneal techniques, low temperature silicide and low temperature contact processes are shown to be effective in reducing the base resistance. These processes when combined with a novel approach to address the collector-base capacitance are shown to produce high performance SiGe HBT devices which demonstrate operating frequencies of 300/420GHz fT/fMAX. This is the first report of 90nm SiGe BICMOS with an fMAX exceeding 400GHz.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::3022e86af25d7bcfb880d8717fa3dd75 https://doi.org/10.1109/bctm.2013.6798182 Zobrazit plný text záznamu